TY  - JOUR
AU  - Mykolaitis, Gytis
AU  - Kersulis, Saulius
AU  - Bumeliene, Skaidra
AU  - Tamasevicius, Arunas
PY  - 2015/10/03
Y2  - 2025/01/02
TI  - 80-dB Microwave Noise from an Avalanche Transistor Circuit
JF  - Elektronika ir Elektrotechnika
JA  - ELEKTRON ELEKTROTECH
VL  - 21
IS  - 5
SE  - 
DO  - 10.5755/j01.eee.21.5.13324
UR  - https://eejournal.ktu.lt/index.php/elt/article/view/13324
SP  - 40-43
AB  - &lt;p&gt;Extremely high ‘excess noise ratio’ of 80 dB is observed from an avalanche transistor circuit, operating in a random pulse mode. Broadband noise spectrum measured from 30 MHz to 1 GHz exhibits good flatness with the nonuniformity of only  1 dB. Experiments have been performed with the silicon bipolar junction microwave transistors. An analog circuit model is proposed and investigated.&lt;/p&gt;&lt;p&gt;DOI: &lt;a href=&quot;http://dx.doi.org/10.5755/j01.eee.21.5.13324&quot;&gt;http://dx.doi.org/10.5755/j01.eee.21.5.13324&lt;/a&gt;&lt;/p&gt;
ER  -