@article{Korolkov_Toompuu_Rang_2013, title={Analysis of Deep Level Centers in GaAs pin-Diode Structures}, volume={19}, url={https://eejournal.ktu.lt/index.php/elt/article/view/5903}, DOI={10.5755/j01.eee.19.10.5903}, abstractNote={This paper presents an analysis of the DLTS (Deep Level Transient Spectroscopy) spectra of GaAs p+-pin-n+ diodes. It is shown that the background spectrum of the deep levels is reproducible and depends on the liquid-phase epitaxy mode (LPE). The temperature dependence of the capacitance-voltage characteristics showed that the i layer is formed by compensation involving deep levels. The space charge covers the width of the i layer and spreads into the depletion p and n regions of the diode structures. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.eee.19.10.5903">http://dx.doi.org/10.5755/j01.eee.19.10.5903</a></p>}, number={10}, journal={Elektronika ir Elektrotechnika}, author={Korolkov, O. and Toompuu, J. and Rang, T.}, year={2013}, month={Dec.}, pages={95-98} }