TY  - JOUR
AU  - Korolkov, O.
AU  - Toompuu, J.
AU  - Rang, T.
PY  - 2013/12/10
Y2  - 2025/01/02
TI  - Analysis of Deep Level Centers in GaAs pin-Diode Structures
JF  - Elektronika ir Elektrotechnika
JA  - ELEKTRON ELEKTROTECH
VL  - 19
IS  - 10
SE  - 
DO  - 10.5755/j01.eee.19.10.5903
UR  - https://eejournal.ktu.lt/index.php/elt/article/view/5903
SP  - 95-98
AB  - This paper presents an analysis of the DLTS (Deep Level Transient Spectroscopy) spectra of GaAs p+-pin-n+ diodes. It is shown that the background spectrum of the deep levels is reproducible and depends on the liquid-phase epitaxy mode (LPE). The temperature dependence of the capacitance-voltage characteristics showed that the i layer is formed by compensation involving deep levels. The space charge covers the width of the i layer and spreads into the depletion p and n regions of the diode structures. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.eee.19.10.5903">http://dx.doi.org/10.5755/j01.eee.19.10.5903</a></p>
ER  -