TY  - JOUR
AU  - Eswaran, U.
AU  - Ramiah, H.
AU  - Kanesan, J.
PY  - 2014/03/26
Y2  - 2025/01/02
TI  - Class-E Power Amplifier with Novel Pre-Distortion Linearization Technique for 4G Mobile Wireless Communications
JF  - Elektronika ir Elektrotechnika
JA  - ELEKTRON ELEKTROTECH
VL  - 20
IS  - 4
SE  - 
DO  - 10.5755/j01.eee.20.4.3185
UR  - https://eejournal.ktu.lt/index.php/elt/article/view/3185
SP  - 53-56
AB  - A new method to improve the battery life span of a 4G handset power amplifier (PA) is proposed. This technique is realized by employing a novel passive linearization topology on a class-E PA. Implemented in a 2 µm InGaP/GaAs Hetero-Junction Bipolar Transistor (HBT) technology, the PA delivers 49 % of power added efficiency (PAE) at output power of 28 dBm while complying with the Long Term Evolution (LTE) regulation at Band 1(1920 MHz–1980 MHz) with corresponding supply voltage headroom of 4 V. The performance enhancement is achieved at LTE channel bandwidth of 20 MHz. To the best of the author’s knowledge, this is the first class-E PA which meets adjacent channel leakage ratio (ACLR) specifications at 20 MHz LTE bandwidth. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.eee.20.4.3185">http://dx.doi.org/10.5755/j01.eee.20.4.3185</a></p>
ER  -