@article{Malisauskas_Plonis_2012, title={The Investigation of Gyroelectric n-InAs Phase Shifters Characteristics}, volume={122}, url={https://eejournal.ktu.lt/index.php/elt/article/view/1836}, DOI={10.5755/j01.eee.122.6.1836}, abstractNote={In this paper the open cylindrical gyroelectric phase shifters characteristics are investigated. The investigation is performed by changing their parameters: the magnetic flux density, the number of layers of dielectric, width and permittivities. The highest differential phase shift in <em>n</em>-InAs semiconductor and semiconductor-dielectric phase shifters can be obtained in range of magnetic flux density from 0 to 0.25 T. The minimum attenuation in phase shifters is obtained with one external dielectric layer. Ill. 8, bibl. 6 (in English; abstracts in English and Lithuanian).<p>DOI: <a href="http://dx.doi.org/10.5755/j01.eee.122.6.1836">http://dx.doi.org/10.5755/j01.eee.122.6.1836</a></p>}, number={6}, journal={Elektronika ir Elektrotechnika}, author={Malisauskas, V. and Plonis, D.}, year={2012}, month={Jun.}, pages={121-124} }