TY  - JOUR
AU  - Osadchuk, V. S.
AU  - Osadchuk, A’. V.
PY  - 2011/03/07
Y2  - 2025/01/02
TI  - The Magneticreactive Effect in Transistors for Construction Transducers of Magnetic Field
JF  - Elektronika ir Elektrotechnika
JA  - ELEKTRON ELEKTROTECH
VL  - 109
IS  - 3
SE  - 
DO  - 10.5755/j01.eee.109.3.185
UR  - https://eejournal.ktu.lt/index.php/elt/article/view/185
SP  - 119-122
AB  - In the given article the method of build-up of radiomeasuring transducers of a magnetic field on a basis magneticreactive effect in bipolar and field-effect transistors is offered. It is shown, that change of a reactive component of a complete resistance from induction density on electrodes a source - drain of a field-effect transistor makes 0,6 Ohm/mT, and for the bipolar transistor on electrodes the emitter-collector - 12,5 Ohm/mT. Such changes of reactive components of a complete resistance are essential, that confirms an opportu-nity of practical application of these effects for making microelectronic radiomeasuring transducers. The circuit of the transducer of a magnetic field on field-effect transistors which sensitivity makes from 510 up to 3500 Hz/mT is offered. Ill. 3, bibl. 8 (in English; ab-stracts in English and Lithuanian).<p><a href="http://dx.doi.org/10.5755/j01.eee.109.3.185">http://dx.doi.org/10.5755/j01.eee.109.3.185</a></p>
ER  -