TY  - JOUR
AU  - Sleptsuk, N.
AU  - Korolkov, O.
AU  - Toompuu, J.
AU  - Rang, T.
AU  - Mikli, V.
PY  - 2012/10/17
Y2  - 2025/01/02
TI  - The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices
JF  - Elektronika ir Elektrotechnika
JA  - ELEKTRON ELEKTROTECH
VL  - 18
IS  - 8
SE  - 
DO  - 10.5755/j01.eee.18.8.2610
UR  - https://eejournal.ktu.lt/index.php/elt/article/view/2610
SP  - 45-48
AB  - This paper presents the characteristics of solid-phase interaction of aluminum with silicon carbide in the process of creating a diffusion welding of contacts to semiconductor devices. It is shown that the solid-phase etching of silicon carbide has an isotropic polishing effect. Proved that not involved in dissolution carbon atoms precipitate as an amorphous thin layer. Are given the differences of the diffusion welded aluminum interaction between a semiconductor silicon carbide and silicon.<p>DOI: <a href="http://dx.doi.org/10.5755/j01.eee.18.8.2610">http://dx.doi.org/10.5755/j01.eee.18.8.2610</a></p>
ER  -